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| e PTB 20080 25 Watts, 1.6-1.7 GHz RF Power Transistor Description ThPTB 20080 is a class A/AB, NPN, silicon bipolar junction, internallymatched RF power transistor intended for 26 Vdc operation from 1.6 to 1.7 GHz. It is rated at 25 Watts minimum output power for PEP applications. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard. 25 Watts, 1.6-1.7 GHz Class AB Characteristics 40% Collector Efficiency at 25 Watts Gold Metallization Silicon Nitride Passivated Typical Output Power & Efficiency vs. Input Power 40 80 30 60 Output Power (Watts) 20 40 VCC = 26 V 10 ICQ = 125 mA f = 1.65 GHz 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 20 0 0 Efficiency (%) 2008 0 EXX X Input Power (Watts) Package 20209 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25 C Above 25 C derate by Storage Temperature Range Thermal Resistance (Tflange = 70C) TSTG RJC Symbol VCER VCBO VEBO IC PD Value 50 50 4.0 3.4 123 0.7 150 1.43 Unit Vdc Vdc Vdc Adc Watts W/C C C/W 1 9/28/98 PTB 20080 Electrical Characteristics Characteristic Breakdown Voltage C to B Breakdown Voltage E to B Cut-off Current C to E DC Current Gain (100% Tested) e Conditions VBE = 0 V, IC = 15 mA IC = 5 mA VCE = 26 V VCE = 5 V, IC = 2 A Symbol V(BR)CES V(BR)EBO ICES hFE Min 50 4.0 -- 30 Typ -- -- -- -- Max -- -- 10 -- Units Vdc Vdc mA -- RF Specifications (100% Tested) Characteristic Power Gain (VCC = 26 Vdc, POUT = 10 W, ICQ = 125 mA, f = 1.65 GHz) Power Output at 1 dB Compression (VCC = 26 Vdc, ICQ = 125 mA, f = 1.65 GHz) Collector Efficiency (VCC = 26 Vdc, POUT = 25 W, ICQ = 125 mA, f = 1.65 GHz) Load Mismatch Tolerance (VCC = 26 Vdc, POUT = 25 W, ICQ = 125 mA, f = 1.65 GHz--all phase angles at frequency of test) Symbol Gpe P-1dB Min 10.5 25 40 -- Typ 11.5 -- 44 -- Max -- -- -- 10:1 Units dB Watts % -- C Impedance Data (data shown for fixed-tuned broadband circuit) VCC = 26 Vdc, POUT = 25 W, ICQ = 125 mA Z Source Z Load Frequency GHz 1.60 1.65 1.70 R 5.6 5.6 5.6 Z Source jX -4.1 -4.0 -4.0 R 2.6 2.6 2.7 Z Load jX -1.0 -0.6 -0.2 Z0 = 50 2 5/6/98 e Typical Performance Gain vs. Frequency 13 PTB 20080 (as measured in a broadband circuit) 12 Gain (dB) 11 VCC = 26 V 10 ICQ = 125 mA PIN = 0.65 W 9 1.60 1.62 1.64 1.66 1.68 1.70 Frequency (GHz) Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject to change without notice. LF (c) 1996 Ericsson Inc. EUS/KR 1301-PTB 20080 Uen Rev. C 09-28-98 3 |
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